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【百家大讲堂】第243期:胶体半导体纳米晶体的化学设计与应用

编辑: 研究生院 发布日期: 2019-09-26 浏览量:

讲座题目:胶体半导体纳米晶体的化学设计与应用

We Play with Chemistry to Design Colloidal Semiconductor Nanocrystals

报 告 人:Vladimir Lesnyak

时   间:2019年10月9日(周三)14:30-16:30

地   点:中关村校区求是楼426会议室

主办单位:研究生院、材料学院

报名方式:登录北京理工大学微信企业号---第二课堂---课程报名中选择“【百家大讲堂】第243期:胶体半导体纳米晶体的化学设计与应用”

【主讲人简介】

  Vladimir Lesnyak,现任德累斯顿工业大学高级研究员,Vladimir Lesnyak于2005年获得白俄罗斯国立大学高分子化学博士学位,2006-2012年在代尔夫特理工大学从事博士后研究,合作导师为A. Eychmüller教授,2012-2015年在意大利理工学院进行研究,合作导师为L. Manna教授。2016年入职德累斯顿工业大学。Vladimir Lesnyak研究员目前作为Frontiers in Chemistry主编,ISRN Nanomaterials Journal编委,已经发表了90多篇论文,包括Chem. Soc. Rev., J. Am. Chem. Soc., ACS Nano, Nano Lett., Nano Today, Adv. Mater., Angew. Chem等。专利1项,合著专著3章,他引次数3700余次,H因子33。Vladimir Lesnyak研究员目前的研究方向主要为纳米材料的胶体合成调控,纳米材料的物理化学特性以及纳米粒子自组装与多聚物的杂化。

 

Vladimir Lesnyak is currently a senior research scientist at Dresden University of Technology.He received his doctor's degree in polymer chemistry from belarusian state university in 2005, and from 2006 to 2012, he did postdoctoral research in Technische Universiteit Delft with professor a. Eychmuller as co-supervisor.From 2012 to 2015 he conducted research in the Istituto Italiano di Tecnologia with professor L. Manna as co-supervisor.He entered Dresden University of Technology at 2016.Vladimir Lesnyak is research topic editor and Editorial board member at Frontiers in Chemistry, ISRN Nanomaterials journal respectively.Up to now, he has published more than 90 papers including Chem. Soc. Rev., J. Am. Chem. Soc., ACS Nano, Nano Lett., Nano Today, Adv. Mater., Angew. Chem and others, 1 patent, 3 book chapters. The papers have already received about 3700 citations,H-index=33.His current research focuses on the regulation of colloidal synthesis of nanomaterials, physical and chemical properties of nanomaterials, self-assembly of nanoparticles and hybridization of polymers.

【讲座信息】

  胶体半导体纳米材料——量子点经历了近十年的研究,已经逐渐走向商业化。其最重要因素主要为两点:(1)其具有尺寸依赖的独特光电性能(2)基于液相合成的简易方法。基于上述两点,该类材料吸引了不同领域的的研究者的高度关注。

  本报告主要总结了不同胶体纳米半导体的研究进展,主要着重于阳离子交换,胶体框架下的掺杂,等离子共振效应以及与聚合物交联达到表面、光谱的调控、在太阳能聚光器中的应用以及高性能薄膜的研究。此外,还将介绍半导体纳米晶体作为场效应晶体管的有源元件的潜在应用。

 

Colloidal semiconductor nanocrystals (also known as quantum dots) have evolved during last few decades from fundamental theoretical concepts to real commercial products (one of the recent examples is a line-up of Samsung QLED TVs in which quantum dots are employed as color converters) owing to intensive efforts of a plethora of research groups worldwide. These nanomaterials benefit on one hand from their unique size-dependent optoelectronic properties, based on quantum confinement. On the other hand, their solution-based synthesis is an amazingly simple process, which can be realized in nearly any chemistry lab. Both these factors greatly promote investigation of semiconductor nanocrystals making this field truly interdisciplinary, involving chemists, physicists, biologists, material researchers, engineers, to name the main players.
 

In this talk, our recent work on the colloidal synthesis of different semiconductor nanocrystals will be summarized. Particular attention will be paid to cation exchange reactions, as a convenient method for modifying the chemical composition of inorganic cores as well as to ligand exchange, as an approach to alter their surface. In the framework of the direct colloidal synthesis a novel approach do dope CdSe nanoplatelets with mercury in order to shift their fluorescence to the red and near-infrared region will be presented. Furthermore, integration of fluorescent semiconductor nanocrystals into composites with polymers, which may be used as luminescent solar concentrators, will be discussed. Quite novel and intensively developed aspect of semiconductor nanoparticles, namely localized surface plasmon resonance, will be touched upon on the example of copper chalcogenide nanocrystals with demonstration of electrochemical modulation of their light absorption and assembly into highly conductive thin films. In addition, a potential application of semiconductor nanocrystals as an active component in field-effect transistors will be shown.